"Biopolar Junction transistor"

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Biopolar Junction transistor
Bipolar Junction Transistor
Objective Type Question and answer.
1. Transistor is a _______ terminal device.
(a) Two
(b) Three
(c)  Four
(a)    (d) Both (a) & (b).

2. The Three Terminal of transistor are:

(a)    Gate , Collector and emitter
(b)   Collector, Base, and Source
(c)    Base , Collector & emitter
(d)   Base, Gate & Collector

3. The Transistor means ____

(a)    Transfer-resistor
(b)   Trans-resistor
(c)    Tri-resistor

4. BJT is a _____ device.

(a)    Unipolar
(b)   Bipolar
(c)    Multipolar.

5. In Unipolar transistor, the current conduction is due to ____

(a)    Minority carriers
(b)   Majority carriers
(c)    Both minority & majority carriers

6. In bipolar transistor, the current is due to _____

(a)    Holes
(b)   Electrons
(c)    Both Holes & electrons

7. BJT is _____ controlled device.

(a)    Field
(b)   Voltage
(c)    Resistor
(d)   Current
8. The types of bipolar junction transistor are.

(a) Ppn, npn
(b) pnp,npn
(C) Npp,ppn
(d) nnp,pnp

9.  The middle region of transistor is called
(a)    Base
(b)   Collector
(c)    Emitter

10. The process by which impurities are added to a pure semiconductor.is
(a)    Diffusing
(b)   Drift
(c)    Doping
(d)   Mixing.

11. Base of the transistor is always ___ and ____doped
(a)    Thick  , Lightly
(b)   Thin, Lightly
(c)    Thin, heavily

12. The collector of a transistor is ___ doped

(a)    Heavily
(b)   Moderately
(c)    Lightly

13. In a transistor the collector region is larger than the emitter region for ______

(a)    Better Heat dissipation
(b)   Higher value of B
(c)    Better amplification

14. Doping concentration is the highest in _____ in a BJT.

(a)    Emitter region
(b)   Collector region
(c)    Base region
(d)   All of the above

15. The ___ region has highest thickness than all other regions in a BJT.

(a)    Base
(b)   Collector
(c)    Emitter

16. The arrow in transistor symbol indicates the direction of ____


(a) Conventional emitter current
(b) election current in emitter
(c) Supply current
(d) ans a & b

17. The arrow in the transistor symbol indicates ____ terminal

(a)    Base
(b)   Collector
(c)    Emitter

18 Transistor has ___pn junction
(a)    One
(b)   Two
(c)    Three

19 The depletion region a emitter junction in an unbiased transistor extends more into the region

(a)    Collector
(b)   Base
(c)    Emitter

20. The depletion region at collector junction in an unbiased transistor extends more into the base
Region because it is __ doped

(a)    Heavily
(b)   Moderately
(c)    Lightly

21.  Barrier voltage is ___ on the N side.

(a)    Positive
(b)   Negative
(c)    Zero

22. __ of electrons and holes in the base region constitutes the base current.

(a)    Ionization
(b)   Recombination
(c)    Thermal agitation

23. ___ constitutes the dominant current in a npn transistor.

(a)    Holes
(b)   Electrons
(c)    Both Holes & Electrons
24. ___ is the highest current in any bipolar transistor.

(a)    IB
(b)   IC
(c)    IE

25. The ___ current of a transistor is neither the largest nor the smallest.

(a)    Base
(b)   Collector
(c)    Emitter

26. Which of the following currents are nearly equal to each other

(a)    IB & IC
(b)   IE & IC
(c)    IB & IE
(d)   IB,IC & IE

27. For transistor properly biased PnP transistor let IC=10mA and IE=10.2 mA. What is the level of IB?

(a)    0.2 mA
(b)   200 mA
(c)    200 UA
(d)   20.2 mA

28. Holes flow constitutes the dominant current in a _____transistor.

(a)    Npn
(b)   Pnp
(c)    Npn &  pnp

29. For operating in the active region the emitter junction should be ___biased and collector
Junction should be ____biased in BJT.
(a)    Forward ,forward
(b)   Reverse, reverse
(c)    Forward, reverse
(d)   Reverse, forward

30. The emitter junction is ___ biased for operating BJT in saturation region.

(a)    Forward
(b)   Reverse
(c)    Zero

31.  In which region are both the collector base and base emitter junctions forward biased for BJT?

(a)    Active
(b)   Cut off
(c)    Saturation
(d)   All of the above

32. For the BJT to operate in the saturation region the base emitter junction must be
 ____ biased and the base collector junction must be ___biased

(a)    Forward , forward
(b)   Forward , reverse
(c)    Reverse , reverse
(d)   Reverse, forward.

33. At what region of operation is the base emitter junction forward biased and the base collector
Junction reverse biased for BJT.

(a)    Saturation
(b)   Linear or active
(c)    Cut-off
(d)   None of the above

34. Which of the following configurations can a transistor set up?

(a)    Common base
(b)   Common emitter
(c)    Common collector
(d)   All of the above

35. In CB configuration a reverse biased collector junction IC= ____ when the emitter
Is left open.

(a)    0
(b)   IE
(c)    ICBO

36. ICBO flows from ___ to ____ when emitter is open.

(a)    Collector , Base
(b)   Base, Collector
(c)    Collector , emitter

37. The ___ carriers constitute current ICBO

(a)    Both minority and majority
(b)   Minority
(c)    Majority

38. ICBO current is ___

(a)    Greater than IC
(b)   Increase with temperature
(c)    Less than ICO
(d)   Flows when base junction is forward biased.

39. with rise in temp ICBO___
       (a)  Increase linearly
       (b) Doubles of every 10 C
       (c) Decrease linearly.
40. The Alpha DC is always
(a)    unity
(b)   less than unity
(c)    greater than unity

41. The α = ____
(a)    IB/IE
(b)   IC/IE
(c)    IC/IB
(d)   None of the above.

42. Smaller the thickness of the base ____ is the value of αdc

(a)    Smaller
(b)   Larger
(c)    Constant.

43. The α is the current gain of ____ configuration

(a)    CB
(b)   CC
(c)    CE

44. In CB configuration input resistance is ______

(a)    ∆VEB/∆IE
(b)   ∆VCB/∆IE
(c)    ∆VCB/∆IC

45. The input resistance of CB configuration is measured constant ______

(a)    IB
(b)   IC
(c)    Vcb
(d)   Vce

46. The dynamic output resistance of transistor in CB configuration is ___ at constant IE.

(a)    ∆VEB/∆IE
(b)   ∆VEB/∆IC
(c)    ∆VCB/∆IC
    
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